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  june 2010 doc id 14933 rev 2 1/12 12 sth180n10f3-2 STP180N10F3 n-channel 100 v, 3.2 m ? , 180 a stripfet? power mosfet h 2 pak, to-220 features ultra low on-resistance 100% avalanche tested application high current switching applications description these devices are the latest refinement of stmicroelectronics unique ?single feature size? strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. the resu lting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. figure 1. internal schematic diagram type v dss r ds(on) max. i d sth180n10f3-2 100 v 4 m ? 180 a STP180N10F3 100 v 4.8 m ? 120 a h 2 pak to-220 1 2 3 1 3 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging sth180n10f3-2 180n10f3 h 2 pak tape and reel STP180N10F3 180n10f3 to-220 tube www.st.com
contents sth180n10f3-2, STP180N10F3 2/12 doc id 14933 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
sth180n10f3-2, STP180N10F3 electrical ratings doc id 14933 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 h2pak v ds drain-source voltage (v gs =0) 100 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25c 120 180 a i d (1) drain current (continuous) at t c =100c 110 120 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 480 720 a p tot total dissipation at t c = 25c 315 w derating factor 2.1 w/c dv/dt peak diode recovery voltage slope tbd v/ns e as (3) 3. starting tj = 25 c, i d = 60 a, v dd = 40 v single pulse avalanche energy tbd mj t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter to-220 h2pak unit rthj-case thermal resistance junction-case 0.48 c/w rthj-a thermal resistance junction-ambient max 62.5 c/w rthj-pcb (1) 1. when mounted on fr-4 board, on 1inch2, 2oz cu. thermal resistance junction-ambient max 35 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics sth180n10f3-2, STP180N10F3 4/12 doc id 14933 rev 2 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,@125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 60 a h2pak to-220 3.2 3.84 4 4.8 m ? m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 6446 710 51.2 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44 v, i d = 120 a, v gs = 10 v (see figure 3 ) - 100 tbd tbd - nc nc nc table 6. dynamic symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 27.5 v, i d = 60 a r g =4.7 ? v gs = 10 v (see figure 2 , figure 7 ) - tbd tbd tbd tbd - ns ns ns ns
sth180n10f3-2, STP180N10F3 electrical characteristics doc id 14933 rev 2 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 120 480 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =120 a, v gs =0 -1.5v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120 a, di/dt = 100 a/s, v dd =30 v, tj=150c (see figure 4 ) - tbd tbd tbd ns c a
test circuits sth180n10f3-2, STP180N10F3 6/12 doc id 14933 rev 2 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
sth180n10f3-2, STP180N10F3 package mechanical data doc id 14933 rev 2 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data sth180n10f3-2, STP180N10F3 8/12 doc id 14933 rev 2 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
sth180n10f3-2, STP180N10F3 package mechanical data doc id 14933 rev 2 9/12 figure 8. h2pak 2 leads drawing table 8. h2pak 2 leads mechanical data dim. mm min. typ. max. a 4.30 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.171 7.971 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 7.45 7.85 l4 1.5 1.7 m2.6 2.9 r 0.20 0.60 v0 8 8 159712_b
package mechanical data sth180n10f3-2, STP180N10F3 10/12 doc id 14933 rev 2 figure 9. h2pak 2 recommended footprint 8 159712_b
sth180n10f3-2, STP180N10F3 revision history doc id 14933 rev 2 11/12 5 revision history table 9. document revision history date revision changes 01-aug-2008 1 first version 03-jun-2010 2 ? removed package, mechanical data: d2pak ? added new package mechanical data: h2pak
sth180n10f3-2, STP180N10F3 12/12 doc id 14933 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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